中文摘要：

A strain-compensated In P-based In Ga As/In Al As quantum cascade detector grown by solid source molecular beam epitaxy is demonstrated. The device operates at 4.3 m up to room temperature(300 K) with a responsivity of 1.27 m A/W and a Johnson noise limited detectivity of 1.02 107 cm Hz1=2/W. At 80 K, the responsivity and detectivity are 14.55 m A/W and 1.26 1010 cm Hz1=2/W, respectively. According to the response range, this detector is much suitable for greenhouse gas detection.

英文摘要：

A strain-compensated InP-based InGaAs/lnAlAs quantum cascade detector grown by solid source molecular beam epitaxy is demonstrated. The device operates at 4.3 μm up to room temperature （300 K） with a responsivity of 1.27 mA/W and a Johnson noise limited detectivity of 1.02 × 10^7 cm-Hz1/2/W. At 80 K, the responsivity and detectivity are 14.55 mA/W and 1.26 ×10^10cm.Hz1/2/W, respectively. According to the response range, this detector is much suitable for greenhouse gas detection.