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中文摘要：
采用TCP（Transverse coupled plasma）等离子体辅助电子枪蒸镀技术,在玻璃衬底上制备了TiN薄膜。用X射线衍射仪（XRD）、扫描电子显微镜（SEM）和原子力显微镜（AFM）研究了不同工艺条件对薄膜晶体结构和表面形貌的影响;用四探针法测量薄膜的电阻率变化。结果表明,所制备的TiN薄膜在（111）晶面有择优取向。与金属薄膜类似,TiN薄膜的平均表面粗糙度与电阻率之间存在近似线性关系,并且电阻率随残余应力增大而增大。
英文摘要：
The TiN film was prepared on glass substrate by means of TCP ion source plasma assisted electron beam evaporation deposition.The film was studied with X-ray diffraction（XRD）,scanning electron microscope（SEM） and atomic force microscope（AFM） to investigate the influence on the crystal structure and surface morphology.Four-point probe method was used to measure the resistivity change of the film.Research results show that the prepared TiN film owns（111） preferred orientation,its average surface roughness and resistivity show an approximate linear relationship and the resistivity grows with the increase of residual stress.
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