中文摘要：

采用射频磁控溅射方法,在Ar-N2混合气中Si衬底上生长Zn3N2薄膜.研究了氮分压和衬底温度对样品的光透明性、微结构、表面形貌以及光学性质的影响,同时研究了样品在空气氛围下保持20天后的性能,并与新镀薄膜进行比较.结果表明,Zn3N2薄膜直接光学带隙可由氮分压调节的范围为1.18～1.50 eV,氮分压比例增大,薄膜的光透明性减弱,并且对暴露在空气中20天以后的薄膜进行测试发现,薄膜的光透明性明显增强,随着衬底温度的升高,生长的薄膜择优取向增多,晶粒尺寸逐渐变大.

英文摘要：

RF-magnetron sputtering was employed to deposit zinc nitride films, from zinc target, in plasma containing a mixture of Ar-N2 gases. Effects of the percentage of N2 in the plasma during deposition of the films and substrate temperature on the optical transparency, microstructure and surface of the sample and optical properties of impact were studied. The performance of samples which kept 20 days under air atmosphere were studied and were compared with the new plating film. The results show that the optical band gap of Zn3 N2 thin film adjusted by N2 pres- sure was 1.18-h 50 eV, and with the percentage of N2 pressure in the plasma increased, optical transparency of thin film turn weakened. 20 days alter exposed to the air, test detected that optical thin film transparency increased. With the increase of substrate temperature, the number of preferred orientation film growth increased, and grain size in- creased gradually.