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中文摘要：
采用水热法制备了CdSe纳米棒，并用TEM、SEM、XRD、TGA—DTA对其进行了表征。结果表明，纳米棒直径在100nm左右，长度约300nm；纳米棒具有闪锌矿的结构；将CdSe纳米棒均匀涂在导电玻璃的导电面上，在400℃下煅烧30min后制备成纳米棒膜电极，并进行了光电化学研究，纳米棒膜结构电极最高单色光的光电转换效率（IPCE）可达74％。
英文摘要：
CdSe nanorod was prepared by hydrothermal method, and the products were characterized with TEM, SEM,XRD,TGA-DTA. The results showed that the nanorod was formed approximately with the diameter of 100nm and the length of 300nm. The zinc blende and wultize structures of CdSe nanorods can be seen ; the CdSe nanorod/ITO film were sintered at 400℃ for 30min. Photoelectrochemical properties of the CdSe nanorod were studied, the maximal IPCE of CdSe nanorods measured in this paper was 74%.
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