半导体量子点作为宽禁带半导体材料的敏化剂有着重要的意义,利用量子点作为光敏剂有许多优点:第一,通过控制量子点的尺寸可以调节它们的能带以至于他们的吸收光谱能够被调节去匹配日光的光谱分布;第二,半导体量子点由于量子局限效应而有大的消光系数,并且有可以导致电荷快速分离的固有极矩。第三,量子点敏化太阳电池有一个独特的潜在的能力,即能够产生大于一的量子产额。因此人们开始尝试将量子点应用于光电化学电池。本文用原位化学方法在纳米尺度TiO2多孔膜电极上修饰了Q—CdS,对其敏化效果进行了表征,并探讨了光电化学机理。
The photon - current conversion properties of nanostructured TiO2/Q - CdS film electrode were studied by using the plm- tocurrent action spectra and the photocurrent dependence of potential. Because of quantum size effect, the bandgap of Q - CdS parti- cles was widened to 2.51eV which were prepared when they were immersed in Cd( NO3 )2 and Na2S solution respectively for 60s and then dried at 80℃. The diagram of energy level of Q - CdS film was determined with the photocurrent - potential curves and photoelectrochemical method. The valence band of Q - CdS film Was - 6. 168eV ( vs Vaccum). The nanostructured TiO2/Q - CdS film electrode could enlarge absorption region and obviously increase the photocurrent. The photon - electron conversion efficiency could be improved.