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中文摘要：
采用水热法制备了具有闪锌矿和纤维锌矿结构的CdSe纳米棒．纳米棒直径约为100nm，长度约为300nm，当外加电极电势为-0.6V时，经聚3-氯噻吩[Poly（3-chlorothiophene），P3CT]修饰的CdSe纳米棒具有最大光电流，并且CdSe／P3CT复合膜电极最高光电转换效率（IPCE）为13.5％，低于CdSe纳米棒膜电极17.7％的最高IPCE,CdSe／P3CT复合膜电极中存在p-n异质结，p-n异质结的存在使得CdSe／P3CT复合膜电极在长波区（〉410nm）的IPCE整体高于CdSe纳米棒薄膜电极的IPCE。
英文摘要：
CdSe nanorods （zinc blende and wulitize） were prepared via hydrothermal method. The CdSe nanorod was formed with a diameter about 100 nm and a length about 300 nm. The photoelectrochemical pro-perties of the CdSe nanorods/P3CT composite film electrode were investigated. The results show that the maxi-mum value of photocurrent appeared at an electrode potential of -0.6 V. The maximum IPCE（ 13.5% ） of the modified film electrode was lower than that of 17.7% CdSe nanorord film electrode. The p-n heterojunc-tion was existed in the CdSe/P3CT composite film electrode. Because of the existence of p-n heterojunction, under certain condition the IPCE of P3CT modified CdSe nanorod was larger than that of CdSe film electrode in the whole long wavelength region （ 〉410 nm）.
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