中文摘要：

采用原位化学法在纳米结构TiO2膜上制备了量子点CdS，PbS（Q—CdS，Q—PbS），并用电化学方法在TiO2／Q—CdS，TiO2／Q-PbS表面聚合3-甲基噻吩[poly（3-Methylthiophene，PMeT）]．用光电化学方法研究了PMeT修饰Q—CdS，Q—PbS连接TiO2纳米结构膜，实验结果表明，PMeT和Q—CdS，Q—PbS单独修饰纳米结构TiO2电极和PMeT修饰Q—CdS，Q—PbS连接纳米结构TiO2电极的光电流产生的起始波长都向长波方向移动；一定条件下在可见光区光电转换效率均较纳米结构TiO2的光电转换效率有明显的提高；聚3-甲基噻吩（PMeT）与Q—CdS，Q-PbS连接的纳米结构TiO2之间存在p-n异质结．在一定条件下p-n异质结的存在有利于光生电子／空穴的分离，在本文实验条件下PMeT修饰Q—CdS，Q—PbS连接纳米结构TiO2电极最高的单色光的光电转换效率分别为11％和7％．

英文摘要：

The Q-CdS, Q-PbS quantum dot were formed in situ on the nanocrystalline TiO2 electrode using chemical bath deposition techniques and the poly（3-methylthiophene） （PMeT） was prepared with electrochemical method on TiO2/Q-CdS （Q-PbS） film. The photoelectrochemical properties of PMeT modified Q-CdS, Q-PbS anchored nanostructured TiO2 film were studied by photoelectruchemical method. The results indicated that PMeT, Q-CdS and Q-PbS modified TiO2 film and PMeT modified Q-CdS, Q-PbS anchored nanostructured TiO2 film produced photocurrent in the longer wavelength region under certain condition. In infrared light region, the conversion efficiency of light to electricity for the composite semiconductor nanoporous films was greatly improved compared with that of the nanostructured TiO2. The experiment result showed that the p-n heterojunction existed in the nanostructure TiO2/Q-CdS （Q-PbS）/PMeT film electrode, which favored the separation of electron/hole pairs generated by photoexcitation. It cound be seen that the maximum value of incident photon to current conversion of efficiency （IPCE） for PMeT modified Q-CdS, Q-PbS anchored nanostructured TiO2 film was 11% and 7% respectively.