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中文摘要：
利用射频磁控溅射两步法分别在玻璃和p型单晶Si衬底上制备ITO/Ti W双层薄膜。采用紫外-可见分光光度计、四探针测试仪和X射线衍射仪表征ITO/Ti W双层薄膜的光学性能、电学性能和结晶性能,用吉时利2400表和线性传输线模型测试ITO/Ti W双层薄膜与p-Si接触的I-V曲线以及比接触电阻。结果表明Ti W薄膜厚度为8 nm时,ITO/Ti W双层薄膜的光电性能最优,还发现Ti W薄膜的引入有利于ITO薄膜的晶粒长大。ITO薄膜与p-Si之间插入Ti W层可以改善接触性能,ITO/Ti W（8 nm）与p-Si接触的比接触电阻最低为4.1×10^-4Ω·cm2。
英文摘要：
The indium-tin-oxide （ITO） coatings were deposited by RF magnetron sputteringin two steps on substrates of glass and p-type Si modified with TiWtransition layer. The impact of the TiW layer thickness on the mi- crostruetures, optoelectricalbehavior of the ITO coating and property at the contact of ITO/TiW double layers and p- Si was investigated X-ray diffraction, ultraviolet visible spectroscopy, and conventional surface probes. The results show that the TiW transition layer significantly improves the propertiesof ITO coatings and contact on p-Si. For ex- ample, as the TiW thickness increased, the ITO grain-size increased ; the sheet-resistance and quality-factor changed in an increase-decrease mode, accompanied by the decreases of the optical band-gap and transmittance. The ITO coatings, with an 8nm thick TiW layer, display the best electrical and optical properties. Besides, the 8 nm TiW layer reduced the specific contact resistance on the p-Si to 4.1 ×10^-4Ω·cm2.
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