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中文摘要：
用两步法制备了SnS薄膜，首先在玻璃衬底上用磁控溅射法沉积-层Sn薄膜，然后在220℃下加热炉中硫化60min．对该薄膜进行结构、表面形貌和光电性能分析，结果表明：制备的SnS薄膜为P型导电，有明显的（040）方向择优取向；薄膜表面致密，S和Sn原子非常接近化学计量比；薄膜呈现高于5×10^4cm叫的吸收系数和持续光电导效应，其直接带隙约为1．23eV，适合作为太阳能电池的吸收层材料和用于制作光敏器件．
英文摘要：
SnS thin films were prepared by two-stage process. Sn precursor layers were deposited on glass suhstrates by sputtering and followed by sulfurization of the metallic tin precursor layers at 220 ℃ in a furnace for 60 min. The characterization results of microstructures, composition and optical and electrical properties show that the SnS film presents p-type conductivity and has a （040） preferred grain orientation; SnS film has an orthorhombic structure, and the surface is uniform and density with the ratio of Sn to S close to 1. It is found that the film shows a high optical absorption coefficient of 5 × 104 cm-1 and persistent photoeonductivity effect. It has a direct energy band gap of 1.23 eV. The prepared SnS film is useful as an absorption layer of solar cells and for fabrication of photo-sensitive device.
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