中文摘要：

采用循环伏安法研究了制备CZTS薄膜四元预制层的电化学沉积机理。结合XRD,SEM,EDS和Raman技术分析预制层退火的相转变机制。结果表明：溶液中Cu2＋和Sn2＋浓度不仅影响其本身的沉积速率,还影响溶液中其他金属元素的沉积速率,而Zn2＋浓度仅影响其本身沉积速率。四元预制层的沉积以原子层外延为机理,在负电位作用下,Cu2＋先转变为Cu原子沉积在衬底表面,且与衬底附近析出的S原子发生化学反应,在衬底上生成CuS,同样,SnS和ZnS也以这种方式交替沉积在衬底上。预制层二元硫化物随着退火温度的升高逐渐转变为Cu2（3）SnS3（4）和Cu2ZnSnS4。利用四元共电沉积预制层550℃退火1h合成的Cu2ZnSnS4薄膜原子比为Cu∶Zn∶Sn∶S=23.72∶12.22∶13.07∶50.99。无偏压下合成的CZTS薄膜光电流达到约6nA。

英文摘要：

Co-electrodeposited mechanism of the quaternary precursor prepared by cyclic voltammetry was studied.And the annealing phase transition mechanism of synthesized CZTS films was analyzed by XRD,SEM,EDS and Raman technologies.The results show that the concentration of Cu2＋and Sn2＋not only affects the deposition rates of its own,but also influences the deposition rates of other metal elements in the solution,while the concentration of Zn2＋only affects its deposition rate.The quaternary precursors are electro-deposited by atomic layer epitaxy,Cu2＋firstly reduces to Cu on the substrate surface under the negative potential,then reacts with S atoms to forms CuS near the substrate.SnS and ZnS are alternately deposited on the substrate in the same way.The binary precursor sulfides gradually transform into Cu2（3）SnS3（4）and Cu2ZnSnS4 with the increasing annealing temperature.The atom ratio of the quaternary co-electrodeposition Cu2ZnSnS4 films synthesized at 550℃for1his Cu∶Zn∶Sn∶S=23.72∶12.22∶13.07∶50.99.The photocurrent of the synthesized CZTS film reaches about 60 nA without bias voltage.