中文摘要：

以聚苯乙烯为固态碳源，抛光铜箔为衬底，通过改变固态碳源的温度探索了固态碳源温度对双温区化学气相沉积法生长石墨烯的影响。样品采用拉曼散射光谱、紫外．可见分光光度计和扫描电子显微镜进行了表征。结果表明，固态碳源温度的变化直接影响了气相碳源浓度，通过控制固态碳源温度，可以控制所得石墨烯的层数。固态碳源动态变温生长能够在生长的起始阶段降低石墨烯形核密度，同时打破晶粒长大时氢气刻蚀速率与石墨烯生长速率的动态平衡，可以有效地提升石墨烯的覆盖率。最终在衬底温度为1000℃条件下使用固态碳源动态变温制备了I2D/IG达到2．9l，透过率为97．6％的高质量单层石墨烯薄膜。

英文摘要：

The graphene was synthesized by chemical vapor deposition（CVD）, with polystyrene as a solid carbon source, on substrate of copper foil. The effect of the temperatures of both the sohd-carbon source and substrate on the number of layers and microstructures of the graphene grown in the two heating-zones was investigated. The graphene was characterized with Raman spectroscopy, ultraviolet visible spect/oscopy and scanning electron microscopy. The results show that depending on the solid-carbon source temperature, the concentration of gaseous-carbon significantly affects the graphene layers. The graphene coverage depends strongly on dynamic changes in the solid-carbon source temperature in its initial growth stage possibly because of reduction of nucleation density and break-down of balance between graphene growth and hydrogen etching. Under the optimized conditions： at a solid-carbon source temperature of 210℃, a substrate temperature of 1000℃ ,a pressure of 100 Pa and etc. ,high quality singlelayered graphene was synthesized with I2D/IG of 2.91 and a transmittance of 97.6.