中文摘要：

Al N薄膜因其具有优异的物理化学性能而有着广阔的应用前景,采用反应磁控溅射法在低温条件下制备AlN薄膜是近些年科研工作的热点。采用直流磁控溅射法,于室温下通入不同流量的氮气在p型硅（100）和载玻片衬底上沉积了AlN薄膜。利用傅里叶变换红外（FTIR）光谱仪、X射线衍射仪（XRD）、扫描电子显微镜（SEM）和分光光度计等分析薄膜的组分、结构、形貌和光学性能。结果表明随着氮气流量的增加,Al N薄膜质量变好,N2流量为8 cm3/min时制备的AlN薄膜为六方纤锌矿结构,在680 cm~（-1）处具有明显的FTIR吸收峰,进一步说明成功制备了AlN薄膜。在300~900 nm的波长范围内,薄膜透过率最高可达94%;薄膜带隙随着氮气流量的增加而增大,最大带隙约为4.04 eV。

英文摘要：

Aluminum nitride（AlN） thin film has broad application prospects due to its excellent physical and chemical properties and Al N film fabrication by the reactive magnetron sputtering method at low temperature is a hotspot of research work in recent years. Al N thin films were deposited at room temperature by DC magnetron sputtering with different N_2 flow rates on p-type Si（ 100） wafer and slide glass substrates. The composition,microstructure,morphology and optical properties of Al N thin films were analyzed by the Fourier transform infrared（ FTIR） spectrometer,X-ray diffractometer（ XRD）,scanning electron microscope（ SEM） and spectrophotometer, respectively. The results show that the quality of films is improved with the increase of the N_2 flow rate,and the obtained Al N thin films under 8 cm~3/ min N_2 are hexagonal wurtzite structure and an intense absorption peak exists at 680 cm~（-1） of wavelength in the FTIR spectrum,which further proves that the AlN films are successfully fabricated. The transmittance of AlN thin films is up to 94% in the wavelength range of 300-900 nm. The optical band gaps of obtained AlN thin films become enlarged with the increase of the N_2 flow rate and the maximumband gap is about 4. 04 eV.