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应变硅NMOSFET中电子迁移率的增强及其温度特性
  • 期刊名称：固体电子学研究与进展，Vol.27,pp.436-439, 2007.
  • 时间：0
  • 相关项目：适用于65nm技术代以后的CMOS器件栅工程和沟道工程关键技术研究
同期刊论文项目
适用于65nm技术代以后的CMOS器件栅工程和沟道工程关键技术研究
期刊论文 36 会议论文 5
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