中文摘要：

随着特征尺寸不断缩小，CMOS器件已步入纳米尺度范围，因此纳米尺度器件的结构表征变得尤为关键。完备的半导体器件结构分析，要求确定原子位置、局部化学元素组成及局域电子结构。高分辨（分析型）透射电镜及其显微分析技术，能够提供衍衬像（振幅衬度像）、高分辨像（相位衬度像）、选区电子衍射和会聚束电子衍射、X射线能谱（EDS）及电子能量损失谱（EELS）等分析手段，已作为半导体器件结构表征的基本工具。配有高角度环形暗场探测器的扫描透射电镜（STEM），因其像的强度近似正比于原子序数（Z）的平方，它可在原子尺度直接确定材料的结构和化学组成。利用Z-衬度像配合高分辨电子能量损失谱技术，可确定新型CMOS堆垛层中的界面结构、界面及界面附近的元素分布及化学环境。近年来新开发的球差校正器使得HRTEM／STEM的分辨率得到革命性提高（空间分辨率优于0．08nm，能量分辨率优于0．2eV），在亚埃尺度上实现单个纳米器件的结构表征。装备球差校正器的新一代HRTEM和STEM，使得高k栅介质材料的研究进入一个新时代。本文首先介绍了原子分辨率电镜（HRTEM和STEM）的基本原理和关键特征，对相关高分辨谱分析技术（如EDS和EELS）加以比较；然后综述了HRTEM／STEM在高k栅介质材料（如铪基氧化物、稀土氧化物和外延钙钛矿结构氧化物）结构表征方面的最新进展；最后对亚埃分辨率高k栅介质材料的结构表征进行了展望。

英文摘要：

As the downscaling of the feature sizes of complementary metal oxide semiconductor （CMOS） devices enters into the ＂nano＂ era, nanoscale structural characterization at device dimensions becomes critical. A full structural analysis of processed semiconductor devices requires an ability to determine atomic positions and local chemical elements and electronic structure. Highresolution （analytical） transmission electron microscopes （HR （A）TEM）, which provide the microscopy techniques such as diffraction contrast imaging （amplitude contrast imaging）, high-resolution TEM imaging （phase contrast imaging）, selected area electron diffraction and convergent beam electron diffraction, and X-ray energy-dispersive spectroscopy （EDS） and electron energy loss spectroscopy （EELS）, have become essential metrology tools in the semiconductor industry. Scanning transmission electron microscope （STEM） with high-angle annular dark field （HAADF） imaging （or Z-contrast incoherent imaging） can directly reveal the structure and chemistry of materials at the atomic scale, due to its imaging intensity being approximately proportional to the square of atomic number （Z） of element. By using Z-contrast imaging and high-resolved EELS spectroscopy, it is very powerful to determine the interfacial structures and the elemental/chemical environment at/around interfaces within advanced CMOS gate stacks. In recent years the new development of aberration corrector （or, Cs-corrector） makes a revolutionizing the performance of HRTEM/STEM instruments, allowing one to achieve a spatial resolution better than 0.08 nm and an energy resolution better than 0.2 eV, thereby making the characterization of individual nanoscale device structure at sub-atomic scale available. The new generation HRTEM/STEM facility equipped with Cs-corrector will benefit high-k gate materials research in the new era. In this review, some basic principles and key features of atomic-resolution electron microscopy, and the associat