位置：成果数据库 > 期刊 > 期刊详情页
高性能绝缘层上应变硅动态阈值MOSFET的优化设计
  • 期刊名称：微电子学，Vol.38, No.1, pp.72-75, 2008
  • 时间：0
  • 相关项目：适用于65nm技术代以后的CMOS器件栅工程和沟道工程关键技术研究
同期刊论文项目
适用于65nm技术代以后的CMOS器件栅工程和沟道工程关键技术研究
期刊论文 36 会议论文 5
同项目期刊论文
A universal electron mobility model of strained Si MOSFETs based on variational wave functions
Electrical hysteresis of the Ti0.25Al0.75Ox dielectric films after high-temperature treatment
Microstructure and dielectric properties of La2O3 doped amorphous SiO2 films as gate dielectric mate
Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temp
Characterization of Titania Incorporated with Alumina Nanocrystals and Their Impacts on Electrical H
Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs
Fabrication of strained Ge film using a thin SiGe virtual substrate
UV emission of tetragonal ZrO2 nanocrystals embedded in ZrSiO4 amorphous matrix
A TiAl2O5 nanocrystal charge trap memory device
A Charge-Trap Memory Device with the Composition-Modulated Zr-Silicate High-k Dielectric Multilayer
Study on the thermal stability and electrical properties of the high-k dielectrics (ZrO2)x(SiO2)1-x
The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O
Transmission electron microscopy observations on the interfacial structures of the Pt/SrBi2Ta2O9/Pt
Impact of 〈100〉Channel Direction for High Mobility p-MOSFETs on Biaxial Strained Silicon
Fabrication and characterization of strained Si material using SiGe virtual substrate for high mobil
Fabrication of High Quality SiGe Virtual Substrates by Combining Misfit Strain and Point Defect Tech
Characterization upon potential properties of HfO2 stabilized by Y2O3 films as cubic phase
Morphology and atomic-scale surface structure of barium titanate nanocrystals formed at hydrothermal
Effect of NH3 and N2 annealing on the interfacial and electrical characteristics of La2O3 films grow
Characterization of high-k gate dielectrics by atomic-resolution electron microscopy: current progre
Challenges in Atomic-Scale Characterization of High-K Dielectrics and Metal Gate Electrodes for Adva
An investigation into ultra-thin pseudobinary oxide (TiO2)x(Al2O3)1-x films as high-k gate dielectri
The thermal stability and electrical properties of LaErO3 films as high-k gate dielectrics
Hydrothermal synthesis of nanocrystalline BaTiO3 particles and structural characterization by high-r
应变硅NMOSFET中电子迁移率的增强及其温度特性
Thermal stability and electrical properties of titanium-aluminum oxide ultrafilms as high-k gate die
高k栅介质原子分辨率的电镜表征：研究进展和展望
Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks
采用SiGe虚拟衬底高迁移率应变硅材料的制备和表征
〈100〉沟道方向对高迁移率双轴应变硅p-MOSFET的作用
应变硅n-MOSFET中电子迁移率的增强及其温度特性
Fabrication of High Quality SiGe Virtual Substrates by Combining Misfit Strain and Point Defect Techniques