Zero biased Ge-on-Si a bandwidth of 4.72 photodetector with GHz at 1550 nm
- ISSN号：1674-1056
- 期刊名称：《中国物理B：英文版》
- 时间：0
- 分类：TN92[电子电信—通信与信息系统;电子电信—信息与通信工程] TP332[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术]
- 作者机构：[1]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- 相关基金：Project supported by the National High-Technology Research and Development Program of China （Grant No 2006AA03Z415）, the Major State Basic Program of China （Grant No 2007CB613404）, and the National Natural Science Foundation of China （Grant No 60676005）.
Acknowledgement The authors would like to thank Li Guo-Hua, Ma Hong-Zhi, Liang Xiu-Qin, Chen Yu and Li Yan from the Research Center of Semiconductor Integration Technology of Institute of Semiconductors, the Chinese Academy of Sciences for their valuable discussions and help with the fabrication techniques.
关键词：
GHZ, 探测器, 带宽, 锗硅, 偏见, 纳米, 化学气相沉积, 反向偏置, Si-based, Ge, epitaxy, photodetector
中文摘要：
E-mail： cbw@semi.ac.cn
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