中文摘要：

提出了一种应用于射频领域的复合多晶硅栅LDMOS结构（DMG-LDMOS），并给出了工艺实现方法。此结构采用了栅工程的概念，所设计的栅电极由S-栅和D-栅两块电极并列组成，其中，S-栅采用功函数较高的P^＋多晶硅；D-栅采用功函数较低的n^＋多晶硅。MEDICI对n沟道DMG-LDMOS和n沟道普通LDMOS的模拟结果表明，该结构能够提高器件的沟道载流子速度，从而增加器件的跨导值，并且该结构在提高器件击穿电压的同时还能提高器件的截止频率。

英文摘要：

A novel DMG-LDMOS （dual-material gate, LDMOS） structure for RF field was proposed accompanied by the concrete realization method in process. The gate of the DMG-LDMOS consists of S-gate （the first gate approaching source with high work-function material p＋ poly） and D-gate （the second gate approaching drain with low work-function material n＋ poly） using the effective concept “gate engineering”. The MEDICI simulations reveal that the DMG-LDMOS can increase the average velocity of electron in the channel, resulting in a higher transconductance. Meanwhile, this structure can increase the breakdown voltage and enhance the maximum cut-off frequency.