中文摘要：

利用二维半导体器件模拟软件MEDICI对LDMOS进行了模拟。采用分段模型计算了器件各部分电阻值和总电阻值，并讨论了电阻值随器件结构参数以及外加偏压变化的情况，给出了高压LDMOS主要的功耗区及其变化情况。

英文摘要：

LDMOS （lateral double-diffused MOS） was simulated by 2D semiconductor numerical simulation software MEDICI, using sectional models, the resistance of each portion and the total resistance of LDMOS were worked out. The resistance changing with the device structure parameters or the bias voltage was discussed. The main power dissipation area and its changing situations were given.