中文摘要：

目前LDMOS已经广泛应用于功率集成电路和微波集成电路中，建立LDMOS的SPICE等效电路变得很重要。以往的模型都是将LDMOS分为线性区和饱和区两段来分析，公式复杂而且计算量大。因此在数值模拟的基础上提出了全导通区域的伏安特性方程。建立了LDMOS I-V特性的宏模型。该模型的特点是参数少，易于提取，得到的SPICE等效电路简单，仿真容易收敛。

英文摘要：

Lateral double-diffused MOSFET （LDMOS） is widely used in power integrated circuits and microwave integrated circuits. So creating equivalent circuit of LDMOS is becoming more important. The previous models divided the on-state region of LDMOS into two parts, linear region and saturation region. The formulas and equivalent circuits are very complicated. This paper presents an I-V equation that is available in the whole on-state region by numerical simulation, and creates the I-V Characteristic Macromodel. The model contains fewer parameters easily extracted. Then we obtain a simpler equivalent circuit. Convergence becomes easier when using this equivalent circuit to simulate power integrated circuits.