中文摘要：

通过准二维的方法，求出了全耗尽SOI LDMOS晶体管沟道耗尽区电势分布的表达式，并建立了相应的阈值电压模型。将计算结果与二维半导体器件模拟软件MEDICI的模拟结果相比较，两者误差较小，证明了本模型的正确性。从模型中可以容易地分析阈值电压与沟道浓度、长度、SOI硅膜层厚度以及栅氧化层厚度的关系，并且发现△Vth与背栅压的大小无关。

英文摘要：

The potential distribution for the channel depletion layer of fully-depleted SOI LDMOS was obtained by using quasi-two-dimensional method, and an analytical threshold voltage model was established. The accuracy of the model is verified by comparison with the results of 2-D semiconductor device simulator MEDICI. From this model, we can find how the channel length, channel doping concentration, the thickness of silicon film and gate oxide influences the threshold voltage, and the variation of threshold voltage is independent on back-gate bias.