中文摘要：

从器件结构和能带的角度分析了提高非易失性存储器性能的可能途径，建立了纳米晶浮栅结构的存储模型，并在模型中考虑了量子限制效应对纳米晶存储性能的影响。基于模型计算，分析了纳米晶材料、高k隧穿介质材料及其厚度对纳米晶浮栅结构存储性能的影响。同时，制作了MIS结构（Si/ZrO2/Au Ncs/SiO2/Al）的存储单元，针对该存储单元的电荷存储能力和电荷保持特性进行测试，并对测试结果进行分析。

英文摘要：

As for the nanocrystal floating gate memory devices, the ways to improve the device performances were analyzed from the point of the device structure and the energy band. The impact of quantum confinement effect on the energy band for nanocrystal was considered and a charging and retention model for nanocrystal floating gate memories was established. Based on this model, it shows the impact of nanocrystal materials, high-k tunneling dielectrics and the thickness of tunneling dielectric on the charging and retention performances. The MIS structure with Au nanoerystals embedded in the ZrO2 tunneling dielectric was fabricated. The charging characteristics and the charge retention performances were electrically investigated, and then the result of the investigation was analyzed.