在硅片和石英上利用射频溅射法沉积了TiO2薄膜,并分别在空气中进行了退火处理。利用椭偏光谱仪对硅片上薄膜进行了椭偏测试,利用紫外-可见分光光度计对石英上薄膜进行了透射光谱测试。利用解谱软件对椭偏谱和透射谱进行了建模解谱,获得了不同基片上薄膜在不同退火温度下的折射指数和消光系数,发现和TiO2块材的光学常数也有明显的区别。通过计算得到了系列薄膜的光学带隙,带隙值范围从3.35~3.88eV,可以为薄膜态TiO2体系的光学应用、设计和相关理论研究提供一定的依据。
TiO2 thin films were deposited on Si and quartz substrates via radio-frequency magnetron sputtering and post annealed at different temperatures in atmosphere.The transmittance of the films deposited on quartz and ellipsometric spectra of the films on Si were obtained by UV-Vis spectrophotometer and spectroscopic ellipsometer,respectively.The optical constants of the films deposited on different substrates were extracted by fitting the transmittance and ellipsometric spectra,and were found obviously different from those of TiO2 bulk material.The band gaps of the films were also determined and the values vary from 3.35 to 3.88eV.Our results would be helpful for the design and application of TiO2 filmsystem and related theoretical studies.