中文摘要：

通过控制射频磁控溅射时间（5,10和15min）和Ag组分制备了三种厚度、四种Ag体积百分比（5%,10%,15%和20%）的Ag-ZnS复合薄膜。微结构研究表明：较低Ag组分（5%,10%和15%）的薄膜表现为β相ZnS体心立方晶体的（220）择优取向结构,未出现Ag的衍射特征峰;Ag体积分数为20%的复合薄膜同时出现了Ag（111）和ZnS（220）的衍射峰,但峰强度明显降低。分析认为：较低Ag组分薄膜中的Ag成分有助于ZnS结晶或晶体长大,但较高Ag组分薄膜中的Ag对ZnS的结晶起到抑制作用。电学特性研究表明：较低Ag组分复合薄膜导电机制为介质状态;而20%Ag的复合薄膜导电机制为过渡状态,以Ag金属颗粒联并而成的网络结构中的渗透电导为主。

英文摘要：

The Ag-doped ZnS films were deposited by RF magnetron sputtering on glass substrates.The impacts of the deposition conditions,including deposition time,dosage of Ag,sputtering power,and pressure,on the properties of the Ag-ZnS films were evaluated.The microstructures were characterized with X-ray diffraction and atomic force microscopy.The results show that the Ag and ZnS formed discrete nano-grains,and that the Ag content and film thickness strongly affects its microstructures and electrical properties.The results also show that low Ag content may be responsible for crystallization and growth of ZnS grains;but high Ag content may inhibit the grain growth.Moreover,the conduction may originate from dielectric and transition mechanisms for the ZnS films with Ag contents lower than and equal to 20% （vol.） Ag,respectively.