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中文摘要：
采用顶接触结构分别在SiO2、聚甲基丙烯酸甲酯（PMMA）绝缘层上制备了以并五苯为有源层的两种有机场效应晶体管（OFET），其中SiO2绝缘层采用热生长法制备，PMMA绝缘层采用溶液旋涂法制备。与常规基于无机绝缘层的器件相比，采用聚合物为绝缘层后，不但器件的制作工艺简化和成本降低，而且器件性能大幅提高，经测试，器件的迁移率提到0．153cm2／Vs，而阈值电压降低6V。采用原子力显微镜（AFM）、X射线衍射（XRD）等对器件性能提高的原因进行了详细分析。
英文摘要：
Pentacene field-effect transistor（OFET） was fabricated with silicon oxide（SiOe ） or poly-meth- ylmethacrylate（PMMA） as the gate insulator. The SlOe insulator was fabricated with thermally grown method, and the PMMA was fabricated by solution-casting method. Comparing with traditional OFETs which have inorganic insulator, the transistor with PMMA dielectric can have advantage in easily making films by solution-processing with low cost, and it can improve the performance of transistors obviously. Then,OFET can be operated with mobility of 0. 153 cmz/Vs and threshold voltage decreases 6 V. Xray diffraction（XRD） measurements and atomic force microscope（AFM） images are also used as the tools for investigation.
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Synthesis, Characterization of 9, 9 '-Bianthracene and Fabrication of 9, 9 '-Bianthracene Field-Effe
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