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中文摘要：
采用顶接触结构研制了以Ta2O5／PMMA为绝缘层，有机材料PTCDI-Cl2为有源层的低电压n型有机场效应晶体管。其中Ta2O5薄膜采用阳极氧化方法制备，PMMA薄膜通过溶液旋涂法制备。与基于单一Ta2O5绝缘层的器件相比，双绝缘层器件的电学性能大幅提高。经测试得到器件场效应电子迁移率为0．063cm^2／Vs，开关电流比为1．7×10^4，阈值电压为2．3V。
英文摘要：
A kind of top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta2O5/PMMA as the double insulator and PTCDI-Cl2 as the semiconductor active layer. The Ta2O5 layer was prepared by using simple economical anodization technique and the PMMA layer was prepared by using spin-coating method. Compared to the OFET with single Ta2O5 insulator,the device with double insulators shows obviously better electrical performance. It has the filed-effect electron mobility of 0. 063 cm^2/Vs,on/off current ratio of 1.7 × 10^4 and the threshold voltage of 2.3 V.
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同项目期刊论文
Synthesis, Characterization of 9, 9 '-Bianthracene and Fabrication of 9, 9 '-Bianthracene Field-Effe
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