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中文摘要：
以表面平整、粗糙的玻璃为衬底，在不同衬底温度下直流磁控溅射沉积a-Si薄膜，制备成glass／a-Si／Al样品，经退火处理制备了poly-Si薄膜。分别采用Raman光谱、XRD光谱等手段研究了衬底粗糙度以及衬底温度对铝诱导晶化（AIC）制备的poly-Si品质的影响。Raman光谱表明：所有样品在521cm。都有尖锐、对称的Raman峰出现，表明样品完全结晶；XRD结果表明：poly-Si在（111）晶向择优生长；XRD在（111）处的半高宽值（FWHM）表明：玻璃衬底的形貌和a-Si沉积的温度对poly-Si的品质产生影响。200℃可能是AIC制备poly-Si薄膜时沉积a-Si时的最适温度。
英文摘要：
Polycrystalline silicon （poly-Si） thin-films were made on planar and textured glass substrates by aluminum-induced crystallization （AIC） of in situ amorphous silicon （a-Si） deposited by DC-magnetron. The poly-Si films were characterized by Raman spectroscopy, X-ray diffraction （XRD） and atomic force microscopy （AFM）. A narrow and symmetrical Ranman peak at the wave number of about 521 cm^-1 was observed for all samples, indicating that the films were fully crystallized. XRD results show that the crystallites in the authors＇ AIC poly-Si films were preferably （111） oriented. The measurement of full width at half maximum （FWHW） of （1 11） XRD peaks showed that the quality of the films was affected by the a-Si deposition temperature and the surface morphology of the glass substrates. It is likely that an a-Si deposition temperature of 200℃ seems to be ideal for the preparation of poly-Si films by AIC.
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