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Al、N共掺Zn1-xMgxO薄膜的制备与性能研究
  • ISSN号：1672-7126
  • 期刊名称：《真空科学与技术学报》
  • 时间：0
  • 分类：TN304.2[电子电信—物理电子学]
  • 作者机构：[1]浙江大学硅材料国家重点实验室,杭州310027
  • 相关基金：国家自然科学基金重点项目（No.50532060）
作者： 高国华[1], 叶志镇[1], 简中祥[1], 卢洋藩[1], 胡少华[1], 赵炳辉[1]
关键词： P型Zn1-XMgxO薄膜, Al、N共掺杂法, 直流反应磁控溅射, P-type Zn1- MgxO thin films, Al-N codoping method, DC reactive magnetron sputtering
中文摘要：

采用直流反应磁控溅射方法，由氨气和氧气的混合气体在玻璃和单晶硅衬底上制备Al、N共掺Zn1-xMgxO薄膜。采用XRD、FE—SEM、Hall实验、UV—VIS透射谱以及EDS等方法对共掺Zn1-xMgxO薄膜的结晶性能、电学和光学性能进行研究。结果表明：薄膜有明显的C轴择优取向，玻璃衬底上制备的p-Zn0．9Mg0.1 O薄膜的电阻率为8．28Ω·m，空穴浓度和迁移率分别为1．09×10^19cm^-3和0．069cm^2／V·S。并且掺Mg的ZnO薄膜透射光谱表现出明显的蓝移。p-Zn0．9Mg01O／n-Si异质结的I-V特性曲线表现出明显的整流特性，可以确定制备的Al、N共掺Zn0.9Mg0.1O薄膜的导电类型是P型的。

英文摘要：

The Al-N codoped Zn1-xMgxO thin films were deposited on glass and single-crystal Si substrates by DC reactive magnetron sputtering. The thin films possess a good crystallinity with c-axis orientation, confirmed by XRD patterns. Via Hall effect measurement, the result shows that the resistivity of the p-Zn0.9Mg0.10 thin film is 8.28 Ω·cm,the hole concentration and mobility are 1.09 × 10^19 cm^-3 and 0.069 cm^2/V＇s. The transmittance spectra reveal a distinct blue shift between Al-N codoped Zn1-xMgxO and undoped ZnO thin films. With good rectifying characteristics, and low current leakage under the bias voltage, the I-V characteristics of the p-Zn0.9Mg0.1O/n-Si heterojunction confirms the p-type conduction of the A1-N codoped Zn0.9Mg0.1O thin film.

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期刊信息
  • 《真空科学与技术学报》
  • 中国科技核心期刊
  • 主管单位:中国科学技术协会
  • 主办单位:中国真空学会
  • 主编：李德杰
  • 地址：北京朝阳区建国路93号万达广场9号楼614室
  • 邮编：100022
  • 邮箱：cvs@chinesevacuum.com
  • 电话：010-58206280
  • 国际标准刊号：ISSN：1672-7126
  • 国内统一刊号：ISSN：11-5177/TB
  • 邮发代号:
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  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,英国英国皇家化学学会文摘,中国北大核心期刊（2000版）
  • 被引量:4421