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Li-N-H共掺法制备p型ZnO薄膜
  • ISSN号：1000-324X
  • 期刊名称：《无机材料学报》
  • 时间：0
  • 分类：TN304[电子电信—物理电子学] O484[理学—固体物理;理学—物理]
  • 作者机构：Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • 相关基金：国家自然科学基金重点项目（50532060）;国家自然科学基金（50572095）;浙江省自然科学基金（Y405126）
作者： Lu Yang-Fan, Ye Zhi-Zhen, Zeng Yu-Jia, Chen Lan-Lan, Zhu Li-Ping, Zhao Bing-Hui
关键词： p-ZnO, 磁控溅射, 共掺, p-type ZnO, magnetron sputtering, codoping
中文摘要：

采用Li-N-H共掺技术在玻璃衬底上生长p型ZnO薄膜．XRD结果表明共掺ZnO薄膜具有高度c轴取向，Hall测试表明薄膜的电阻率为25．2Ω．cm，Hall迁移率为0．5cm^2／（V·s），空穴浓度为4．92×10^17/cm^3．此外，p-ZnO薄膜在可见光区域具有90％的高透射率．

英文摘要：

Li-N-H codoped p-type ZnO films were fabricated on glass substrates by DC reactive magnetron sputtering. X-ray diffraction, Hall-effect measurement, photoluminescence spectra and transmittance spectra were used to characterize the films. The results show that the codoped films are highly c-oriented with a p-type conduction, resistivity of 25.2Ω.cm, Hall mobility of 0.5cm^2 / （V.s）, carrier density of 4.92 × 10^17cm^- 3, and transmittance of about 90%.

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期刊信息
  • 《无机材料学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国科学院上海硅酸盐所
  • 主编：郭景坤
  • 地址：上海市定西路1295号
  • 邮编：200050
  • 邮箱：wjclxb@mail.sic.ac.cn
  • 电话：021-52411302
  • 国际标准刊号：ISSN：1000-324X
  • 国内统一刊号：ISSN：31-1363/TQ
  • 邮发代号:4-504
  • 获奖情况:
  • 获"中国百种杰出学术期刊"称号
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  • 被引量:21274