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Fabrication and post-anneal activation of p-type ZnMgO : Li film using dc reactive magnetron sputter
  • ISSN号：0167-577X
  • 期刊名称：Materials Letters
  • 时间：0
  • 页码：2554-2556
  • 语言：英文
  • 相关项目：稳定优质的p型ZnO可控生长与同质ZnO-LED电致发光
作者： Zhu, Liping|He, Haiping|Ye, Zhizhen|Lin, Shisheng|Zeng, Yujia|Zhao, Binghui|Chen, Lingxiang|
同期刊论文项目
稳定优质的p型ZnO可控生长与同质ZnO-LED电致发光
期刊论文 56
同项目期刊论文
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Al-N共掺p型Zn_(0.95)Mg_(0.05)O薄膜的性能
Effect of oxygen pressure on structural and electrical properties of pulsed laser deposition-derived
Al、N共掺Zn_(1-x)Mg_xO薄膜的制备与性能研究
Fabrication of p-type Li-doped ZnO films by pulsed laser deposition
Synthesis and characterization of dendritic ZnMgO nanostructures
p-Type conduction in phosphorus-doped ZnO thin films by MOCVD and thermal activation of the dopant
MOCVD法制备磷掺杂p型ZnO薄膜
ZnO薄膜的缺陷研究进展
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Synthesis of vertically aligned Al-doped ZnO nanorods array with controllable Al concentration
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在不同衬底温度下用直流反应磁控溅射法制备p型ZnO薄膜(英文)
Co掺杂ZnO薄膜的结构和磁学性能(英文)
Fine structure on the excitonic emission in AgI nanoparticles embedded in silica glass
Growth and properties of ZnO/hexagonal ZnMgO/cubic ZnMgO nanopagoda heterostructures
Synthesis of two kinds of ZnO nanostructures by vapor phase method
控制O_2流量生长结状ZnO微纳米棒及其特性研究
Li-N-H共掺法制备p型ZnO薄膜
衬底类型对于Ga-N共掺杂ZnMgO薄膜性能的影响
生长参数对MOCVD法制备的p型ZnO薄膜性能的影响
在不同衬底温度下用直流反应磁控溅射法制备p型ZnO薄膜
射频反应磁控溅射法退火生长Na-N共掺杂p-ZnO薄膜
PLD法制备锑掺杂p型ZnO薄膜
Al、N共掺Zn1-xMgxO薄膜的制备与性能研究
控制O2流量生长结状ZnO微纳米棒及其特性研究
Na掺杂p型ZnO和ZnO/ZnMgO多量子阱结构基LED的制备与室温电注入发射紫蓝光
Room-temperature electroluminescence of p-ZnxMg（1-x）O：Na/n-ZnO p-n junction light emitting diode
脉冲激光沉积法Li-N双受主共掺p型ZnO薄膜的生长及其特性
PLD法合成MgxZn1-xO纳米柱阵列
Al-N共掺p型Zn_0.95Mg_0.05O薄膜的性能