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Na掺杂p型ZnO和ZnO/ZnMgO多量子阱结构基LED的制备与室温电注入发射紫蓝光
  • ISSN号：1674-4926
  • 期刊名称：《半导体学报：英文版》
  • 时间：0
  • 分类：TN3[电子电信—物理电子学]
  • 作者机构：[1]浙江大学硅材料国家重点实验室,杭州310027
  • 相关基金：国家重点基础研究发展规划（批准号：2006CB604906）和国家自然科学基金（批准号：批准号：50532060）资助项目
作者： 叶志镇[1], 林时胜[1], 何海平[1], 顾修全[1], 陈凌翔[1], 吕建国[1], 黄靖云[1], 朱丽萍[1], 汪雷[1], 张银珠[1], 李先杭[1]
关键词： LED, Na掺杂, P型ZNO, ZnO/ZnMgO多量子阱, LED, Na doped, p-type ZnO, multi-quantum wells
中文摘要：

在硅单晶上,采用了环境友好的ZnO/Zn0.9Mg0.1O多层量子阱结构作为有源层,Na作为p型掺杂元素,制备了ZnO发光二极管（LED）.该LED在室温电注入条件下,实现了较强的紫蓝发光,且有效控制了缺陷发光.这项工作将为ZnO LED走向应用起到重要的推进作用.

英文摘要：

Using ZnO/Zn0.9Mg0.1O multi-quantum wells as active layer and Na as acceptor dopant of ZnO, we fabricate ZnO light- emitting diode （LED） on silicon substrate. We observe strong blue-violet emission and negligible defect emission from this device under low current injection at room temperature. This work could have significant impact on the practical application of ZnO LED.

同期刊论文项目
稳定优质的p型ZnO可控生长与同质ZnO-LED电致发光
期刊论文 56
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Effect of oxygen pressure on structural and electrical properties of pulsed laser deposition-derived
Al、N共掺Zn_(1-x)Mg_xO薄膜的制备与性能研究
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在不同衬底温度下用直流反应磁控溅射法制备p型ZnO薄膜(英文)
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控制O2流量生长结状ZnO微纳米棒及其特性研究
Room-temperature electroluminescence of p-ZnxMg（1-x）O：Na/n-ZnO p-n junction light emitting diode
脉冲激光沉积法Li-N双受主共掺p型ZnO薄膜的生长及其特性
PLD法合成MgxZn1-xO纳米柱阵列
Al-N共掺p型Zn_0.95Mg_0.05O薄膜的性能
期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,英国英国皇家化学学会文摘,中国北大核心期刊（2000版）
  • 被引量:7754