中文摘要：

利用直流反应磁控溅射法，以N2O为N掺杂源，用Al-N共掺技术制备了P型Zn0.95Mg0.05O薄膜．用X射线衍射分析（XRD）、Hall测试仪和紫外可见（UV）透射谱等研究方法对其晶体结构、电学性能和禁带宽度进行分析．XRD分析结果表明，Zn0.95Mg0.05O薄膜具有良好的晶格取向，Hall测试的结果所得P型Zn0.95Mg0.05O薄膜最低电阻率为58．5Ω·cm，载流子浓度为1．95×10^17cm^-3，迁移率为0．546cm^2／（V·s），UV透射谱所推出的薄膜禁带宽度中，纯ZnO，p型Zn0.95Mg0.05O和p型Zn0.9Mg0.1O分别为3．34，3．39和3．46eV，可以看出Mg在ZnO禁带宽度中起了调节作用．

英文摘要：

Al-N codoped p-type Zn0.95Mg0.05O thin films were deposited on glass substrates by DC reactive manetron sputtering,N2O was used as the N doping source. The XRD patterns showed that the introduction of Mg and Al has no effect on the crystallinity of the films,the films all showed c-axis preferential orientation. A conversion of conduction type was confirmed by Hall effect measurement in a range of temperature from 400 to 530℃. The lowest reliable room temperature resistivity was found to be 58. 5Ω·cm,with a carrier concentration of 1.95 × 10^17cm^-3 and a Hall mobility of 0. 546cm^2/（V·s）. The p-type behavior is stable. The optical transmittance spectra reveal blue shift in optical bandgap for the p-type Zn0.95Mg0.05O comparing with that for pure ZnO,which confirms the effective incorporation of Mg. The band gap of alloy is controllable.