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中文摘要：
用热蒸发化学气相沉积法成功制备了β-Ga2O3纳米材料,并研究了该纳米材料在高温下的电学特性.X射线衍射分析显示,产物为单斜结构的-Ga2O3.扫描电子显微镜及透射电镜测试表明,纳米带的宽度小于100 nm,长度有几微米;较大氧流量时制备出β-Ga2O3纳米晶粒结构,晶粒尺度在80～150 nm.电学特性的测试表明：当温度低于800℃时,纳米带电导率几乎不变,当温度高于800℃以上时,电导率和温度呈指数关系.
英文摘要：
Gallium oxide （β-Ga2O3） nanomaterials have been prepared from gallium and oxygen by thermal evaporation in argon atmosphere,and the electrical transport properties have been examined at high temperature.X-ray diffraction （XRD） reveals that the synthesized products are monoclinic gallium oxide,and it is further confirmed by electron diffraction of transmission electron microscope （TEM）.The observation of scanning electron microscope （SEM） reveals that β-Ga2O3 nanobelt width is less than 100 nm and the length is several micrometers.The electricity property was studied at different high temperatures
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