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中文摘要：
采用脉冲直流磁控溅射的方式沉积In-Ga-Zn-O(IGZO)膜层作为TFT的有源层。在TFT沟道处的有源层和绝缘层的界面上,通过溅射法制作一定厚度的负电荷层对阈值电压(Vth)进行调制,使得Vth由-3.8 V升高至-0.3 V,器件由耗尽型向增强型转变。通过增加Al2O3作为负电荷层,可有效地将Vth控制在0 V附近,并且提高其器件稳定性,得到较好的电学特性:电流开关比Ion/Ioff>109,亚阈值摆幅SS为0.2 V/dec,阈值电压Vth为-0.3 V,迁移率μ为9.2 cm2/(V·s)。
英文摘要：
TFT device with In-Ga-Zn-O ( IGZO ) film as the active layer deposited by pulse DC sputtering was fabricated. An Al2 O3 film which was also deposited by sputtering was sandwiched be-tween the active layer and an insulating layer. The Al2 O3 acted as a negative charge layer for thresh-old voltage modulation (Vth). It raised the Vth from -3. 8 V to -0. 3 V, enhancing the formation of a depletion mode device. The application of Al2 O3 as a negative layer can effectively control Vth around 0 V and enhance the stability of the device. Improved device characteristics such as:on/off current ratio (Ion/Iof ) >109, sub-threshold slope(SS) of 0. 2 V/dec, Vth of -0. 3 V, and mobility (μ) of 9. 2 cm2/(V·s) were therefore achieved.
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