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中文摘要：
采用一种新型有机电致发光二极管（OLED）的阳极结构，在玻璃衬底上以半透明的A1膜为出光面，通过在空穴注入层（HIL）和空穴传输层（HTL）中间插入MoOa层，制备了底发射OLED。制备的器件结构为Glass／Al（15nm）／HAT—CN（IOnm）／M003（30nm）／NPB（30nm）／Alq3（60nm）／Bphen（Xnm）／LiF（1nm）／A1（150nm）。用Bphen取代Alqa作为电子传输层（ETL），有利于降低驱动电压和增强器件亮度，器件的最高亮度可以达到15128cd／m^2，起亮电压约为3．1V；Bphen作为BTL的器件相比，器件的发光效率提高了近3倍。
英文摘要：
A novel anode structure of organic light-emitting diode （OLED） was fabricated by inserting a molybdenum trioxide （MoO3） layer into the interface between the hole injection layer （HIL） 1,4,5,8, 9,11-hexaazatriphenylene-hexacarbonitrile （HAT-CN） and the hole transport layer 4,4＇-bisEN-（1-naph- thyl）-N-phenylamino]biphenyl （NPB）. The OLED with a 150 m-thick A1 top cathode and a transparent A1 bottom anode on a glass substrate was fabricated. It has the configuration of Glass/Al（15 urn）/ HAT-CN（10 nm）/ MoOa（30 nm）/NPB（30 nm）/Alqa （60 nm）/ Bphen（X nm）/LiF（1 nm）/Al（150 nm）. We used Bphen to replace Alq3 as the electron transport layer,which is beneficial to the reduction of the driving voltage and the enhancement of the luminance. The highest luminance of the device reaches 15 128 cd/m2 at 1a V,with a turn on voltage of 3.1 V. The luminance efficiency is increased by nearly three times with Bphen as electron transport layer （ETL） compared with that with Alq3.
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