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中文摘要：
基于一体化封装技术,先将铝基板进行硬质阳极氧化处理使其绝缘,后将蓝光LED芯片直接封装到铝基板上,分别制成大功率白光和蓝光LED,其中白光LED由蓝光芯片涂覆YAG∶Ce荧光粉制成。将白光和蓝光LED分别用500 mA和700 mA电流加速老化1 000 h,平均每间隔24 h测试其各种光学参数,对比蓝光LED与白光LED的衰减情况。白光LED的光通量衰减比蓝光严重,但白光光功率的衰减比蓝光慢。LED的衰减分为两个阶段：第一阶段芯片与荧光粉同时衰减;第二阶段主要是芯片的衰减,荧光粉衰减较慢。
英文摘要：
Insulation layer of aluminum substrate for LED encapsulation was made by hard anodizing technology.White and blue GaN-based light-emitting diodes were encapsulated on the aluminum plate directly.White LED was fabricated by blue chip coated with YAG∶Ce phosphor,while blue LED didn＇t coated with phosphor.Accelerated aging tests at 500 mA and 700 mA were carried out for about 1 000 h on the new type of integrated high-power.Then optical parameters of LEDs were tested per 24 h.Compared with the blue and white LED,we could get the following conclusions： White LED luminous flux attenuates seriously than the blue LED,while optical power is opposite.There are two stages in LED attenuation： The chip and phosphor decay at the same time in initial stage of aging,well blue chip attenuation is dominant after a certain period of time.
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