中文摘要：

为了进一步平衡OLED器件内部空穴和电子载流子的注入,制备了结构为ITO/NPB（40nm）/Alq3（45nm）/Bphen：（X%）BCP：（5%）Cs2CO3（15nm）/Cs2CO3（1.5nm）/Al（100nm）的OLED器件,通过改变BCP的掺杂浓度,研究了以Bphen：BCP：Cs2CO3作为电子传输层对OLED器件发光亮度、电流密度和效率等性能的影响。结果表明,采用Bphen：BCP：Cs2CO3作为电子传输层能提高器件的电子注入能力,改善器件的性能,相比于未引入BCP的器件,采用BCP掺杂浓度为10%的Bphen：BCP：Cs2CO3作为电子传输层,可以使器件的最大电流效率提高46%,达到3.89cd/A,且在电压从为5V上升至10V的过程中,器件的色坐标一直为（0.35,0.55）,具有很高的稳定性。原因是由于BCP的高LUMO能级和高HOMO能级,能够有效阻挡空穴到达阴极,减小空穴漏电流,同时使电子的注入更容易,电子和空穴的注入更加平衡,发光也更加稳定。

英文摘要：

To further balance the of injection hole and electron carriers in the organic light-emitting diode（OLED）,the OLED device with the structure of ITO/NPB（40nm）/Alq3（45nm）/Bphen：（X%）BCP：（5%）Cs2CO3（15nm）/Cs2CO3（1.5nm）/Al（100nm）is prepared.The effect of Bphen：BCP：Cs2CO3as electron transport layer on the luminescence brightness,current density and current efficiency OLED devices of is studied by changing the doping concentration of BCP.Results show that Bphen：BCP：Cs2CO3used as electron transport layer can improve the electron injection and the performance of devices.Compared with the device without BCP,Bphen：（10%）BCP：Cs2CO3as electron transport layer can increase the maximum current efficiency by 46%and reach 3.89cd/A.The Commission International de l′Eclaiage CIE chromaticity coordinate keeps（0.35,0.55）as the voltage increases from 5Vto 10 V,and it has high stability.Because the high lowest unocoupied molecular orbital（LUMO）and highest occupied molecular orbital（HOMO）energy levels of BCP can effectively block the hole to reach the cathode and reduce hole leakage current,and at the same time,the electron injection is easier.So the injection of electrons and holes becomes more balanced,and the luminescence is also more stable.