中文摘要：

研究了MoO3修饰氧化石墨烯（GO）作为空穴注入层的影响。采用旋涂的方法制备了GO,再真空蒸镀修饰层MoO3,得到了空穴注入能力强和透过率高的复合薄膜。MoO3的厚分别采用0、3、5和8nm。通过优化MoO3的厚度发现,当MoO3的厚为5nm时,复合薄膜的透过率达到最大值,在550nm的光波长下透光率为88%,且此时采用复合薄膜作为空穴注入层制备的结构为ITO/GO/MoO3（5nm）/NPB（40nm）/Alq3（40nm）/LiF（1nm）/Al（100nm）的有机电致发光器件（OLED）性能最佳。通过对OLED进一步的优化,改变Alq3的厚度,分别取50、60和70nm,测量其电压、电流、亮度、色坐标和电致发光（EL）光谱等参数发现,当Alq3的厚为50nm时器件性能最佳。最终制备了结构为ITO/GO/MoO3（5nm）/NPB（50nm）/Alq3（50nm）/LiF（1nm）/Al（100nm）的OLED,在电压为10V时,最大电流效率达到5.87cd/A,与GO单独作为空穴注入层制备的器件相比,提高了50%。

英文摘要：

The effect of graphene oxide （GO） modified by MoO3 as a hole injection layer is studied. The GO was prepared by using spin-coating method, then the buffer layer MoO3 was vacuum evaporated, and finally the composite film with high hole injection ability and transparency was obtained. The thicknesses of MoO3 are respectively 0 nm,3 nm,5 nm and 8 nm. When the thickness of MoO3 is 5 nm,the composite film exhibits a transmission value of 88% at 550 nm,and the organic light emitting diode （OLED） with the structure of indium tin oxide （ITO）/GO/MoO3 （5 um）/naphthyl-substituted benzidine derivative NPB,40 nm）/Alq3 （40 nm）/LiF（1 nm）/Al（100 nm） has the best performance. Then the OLED is further optimized by changing the thickness of Alq3. The thicknesses of Alq3 are 50 nm,60 um and 70 urn, respectively. By measuring the voltage, current, brightness, color coordinates, the electric light emission spectra and other parameters,it can be found that when the thickness of Alqa is 50 nm, the device has the best performance. The OLED device with the structure of ITO/GO/MoOa （5 urn）/NPB（50 nm） /Alq3 （50 um）/LiF（lum）/Al（100 nm） was prepared. The maximum current efficiency of 5.87 cd/A at the voltage of 10 V is obtained,which is 50% higher than that of the devices with GO as hole injection layer.