中文摘要：

针对压印过程中模具与晶圆密贴度和压印面积的矛盾，提出释放保型软压印光刻工艺。此工艺包括五步加载过程，可充分挖掘压印图型转印误差根源以及图型转印保真度与阻蚀胶留膜厚度的内在矛盾。通过目标载荷量的调节与控制将模具弹性回弹调整到紫外光固化步骤前，消除压印过程的内在矛盾，实现压印面积由2cm^2向8cm^2的提升，同时保证阻蚀胶留膜厚度的要求。基于创新的释放保型软压印工艺，一套低成本及结构简单的压印光刻原型机被设计构建，一系列压印结果证明应用此工艺的压印光刻机具有同场压印不同面积、特征尺寸结构图型的多次复制能力。

英文摘要：

Due to the conflict between the imprint area and the parallelity of mould and wafer, the elastometric imprint lithography is described. The loading process and the key technology of this process are analyzed and the error factors during pattern transferring process are also mined. Through comparing among the loading process factors, the conflict between the pattern transferring accuracy and residual resist thickness is indicated. By adjusting the elastic restore step before the UV-cure step, a novel imprint process-DRPPR, distortion reduction by precure press releasing is established and the inner conflict can be eliminated, and the imprint area can be lifted from 2 cm2 to 8 cm2. Based on the novel imprint lithography process, a low cost and simple structure prototype machine of step imprint lithography is designed and fabricated, and a series of imprint experiments show that the new imprint process can meet the needs for different pressing areas, feature sizes and repetitious imprints.