通过分析集成电路制造工艺中的核心环节——光刻技术,采用机械微复形原理的压印光刻技术可避免传统光学光刻的光学衍射限制,能够对最小到6nm特征尺寸的图形进行复制。通过研究压印光刻原理,详细分析对比热压印及常温压印的工艺特点、复形面积、模具结构和阻蚀胶固化过程等,揭示出常温压印更适用于多层套刻的图形制作。针对基于紫外光固化的常温压印光刻工艺在压印过程中的关键技术:阻蚀胶成膜控制、对准、套刻、精确加载、留膜厚度控制、阻蚀胶固化控制等进行深入研究,提出释放保形软压印工艺,能够实现基于常温软模具压印的大面积亚100nm级特征尺寸图形的复制。最后,以SIL-I型分步式常温紫外光固化压印光刻机的研究为例,对其结构特性做出深入分析,估算出系统的精度等级;通过试验,对系统的压印复形精度做出评估。
Through analyzing optical Lithography, which is the core of the integrated circuit manufacturing technique, imprint lithography based on mechanical micro-replicating technique can avoid the diffracting limitation of traditional optical lithography and has the ability to replicate pattern with 6 nm feature sizes. Based on analyzing the imprint lithography fundamental, the process characteristic, imprint area, mould structure, and resist curing process during hot embossing and imprint lithography in room temperature processes is compared in detail and it can be proved that the imprint lithography in room temperature is well match to the pattern transfer of multi-layers lithography. Through analyzing the key techniques of ultra violet curing imprint lithography in room temperature, the control of filming resist, alignment, overlay lithography, precise load, residual resist control, and resist curing control, a novel imprint process-distortion reduction by precure press releasing is established, which can realize pattern transfer of sub-100 nm feature sizes in large area field. In the end, the structure properties of SIL-I imprint tool is deeply discussed, whose precision level is calculated, and by analyzing the results of several imprint experiments the replicating accuracy of imprint lithography is also evaluated.