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中文摘要：
利用激光干涉结晶方法,采用周期为400nm的一维（1D）移相光栅掩模调制KrF准分子激光器的脉冲激光束斑的能量分布,在不同厚度的超薄氢化非晶硅（a-Si：H）膜内直接制备1D有序纳米硅（nc-Si）阵列.拉曼散射谱表明,样品上呈条状分布的受辐照区域发生晶化.原子力显微镜和透射电子显微镜测试结果表明：1D的nc-Si阵列的周期和移相光栅掩模一样.随着a-Si：H膜厚度从10nm降至4nm,通过控制激光的能量密度,每个周期中nc-Si条状分布区宽度可达到30nm.nc-Si条状分布区的高分辨电子显微镜照片显示出清晰的nc-Si晶格像.
英文摘要：
One-dimensional periodic nanocrystalline silicon（nc-Si） arrays were fabricated by laser interference crystallization combined with one-dimensional phase shifting grating mask（PSGM）.The laser energy density irradiated on the surface of samples with different thicknesses of a-Si：H can be modulated by the PSGM with periodicity of 400 nm.Raman spectra confirmed the crystallization of the irradiated stripe-patterned area of the samples.The transmission electron microscopic and atomic force microscopic images demonstrate that the periodicity of one-dimensional nc-Si arrays is the same as that of the PSGM.And by controlling the laser energy density,a stripe width of 30 nm in each period was obtained as the thickness of a-Si：H decreased from 10 to 4 nm.The high resolution transmission electron microscope images show the clear crystalline lattice of nc-Si within the stripe patterns.
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