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中文摘要：
研究镶嵌在超薄非晶氮化硅（a-SiNx）层之间的双层纳米硅（nc-Si）的电荷存储现象．利用等离子体增强化学气相淀积（PECVD）技术在硅衬底上制备a-SiNx／a-Si／a-SiNx／a-Si／a-SiNx多层薄膜结构．采用常规热退火方法使非晶硅（a-Si）层晶化，形成包含双层nc-Si的金属．氮化物．半导体（MIS）结构．通过电容电压（C-V）特性测量，观测到该结构中由于电荷存储引起的C-V回滞现象，并在室温下成功观察到载流子基于Fowler-Nordheim（F-N）隧穿注入到第一层、第二层nc-Si的两级电荷存储状态．结合电流电压（I-V）特性的测量，对电荷存储的机理进行了深入分析．
英文摘要：
Doubly stacked layers of amorphous silicon （a-Si） between amorphous silicon nitride （a-SiNx ） layers have been fabricated by plasma enhanced chemical vapor deposition （PECVD）technique. Si nanocrystal （nc-Si） layers were formed by thermal crystallization of a-Si layers after a furnace annealing at 1100℃ for 30 min in N2 ambient. The phenomena of charge trapping and storage in nc-Si layers were observed in both capacitance-voltage （C-V） and current-voltage （I-V） measurements at room temperature. The structure has revealed a double-level charging process. Two stages of charge storage were evident in the series of C-V curves. The phenomena and mechanism of charge storage were discussed in detail.
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