中文摘要：

AlGaN/GaN高电子迁移率晶体管（HEMT）与5纳米AlN钝化等离子体增强原子层沉积（EN PEALD）的制备，由50纳米氮化硅是由等离子体增强化学气相沉积（PECVD）生长。随着PeALD A1N钝化，为更有效地抑制电流崩塌和器件具有更好的亚阈值特性。此外，AlN插入增加射频跨导，从而导致更高的截止频率。直流特性表明，在氮化铝/氮化硅钝化设备很小的氮化硅钝化的设备相比高温漏电流和跨导最大降解温度依赖性，表明AlN钝化实验提高了AlGaN/GaN HEMT高温作业。

英文摘要：

A1GaN/GaN high electron-mobility transistors （HEMTs） with 5 nm A1N passivation by plasma en- hanced atomic layer deposition （PEALD） were fabricated, covered by 50 nm SiNx which was grown by plasma enhanced chemical vapor deposition （PECVD）. With PEALD A1N passivation, current collapse was suppressed more effectively and the devices show better subthreshold characteristics. Moreover, the insertion of A1N increased the RF transconductance, which lead to a higher cut-off frequency. Temperature dependence of DC characteristics demonstrated that the degradations of drain current and maximum transconductance at elevated temperatures for the A1N/SiNx passivated devices were much smaller compared with the devices with SiNx passivation, indicating that PEALD A1N passivation can improve the high temperature operation of the A1GaN/GaN HEMTs.