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A high-performance enhancement-mode AIGaN/GaN HEMT
  • 期刊名称：半导体学报
  • 时间：0
  • 页码：45-47
  • 语言：中文
  • 分类：TN386[电子电信—物理电子学] TN304.23[电子电信—物理电子学]
  • 作者机构：[1]National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China, [2]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 相关基金：Project supported by the National Natural Science Foundation of China（Nos.60890192 60876009）.
  • 相关项目：InAlN/GaN无应变新异质结场效应晶体管材料研究
作者： 尹甲运|周伟|周瑞|冯志红|谢圣银|蔡树军|
关键词： HEMT器件, AlGaN, 增强型, 性能, 等离子体处理, 截止频率, 阈值电压, 电流密度, enhancement-mode, AlGaN/GaN HEMT, fluorine plasma, threshold voltage, numerical simulation
中文摘要：

Corresponding author. Email： blueledviet@yahoo.com.cn

同期刊论文项目
GaN基功率器件与材料可靠性基础问题研究
期刊论文 44 会议论文 7 获奖 2 专利 19
InAlN/GaN无应变新异质结场效应晶体管材料研究
期刊论文 33 会议论文 10 获奖 1 专利 4
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