中文摘要：

Electrical stress experiments under different bias configurations for AlGaN/GaN high electron mobility transistors were performed and analyzed.The electric field applied was found to be the extrinsic cause for the device instability,while the traps were recognized as the main intrinsic factor.The effect of the traps on the device degradation was identified by recovery experiments and pulsed I-V measurements.The total degradation of the devices consists of two parts:recoverable degradation and unrecoverable degradation.The electric field induced traps combined with the inherent ones in the device bulk are mainly responsible for the recoverable degradation.

英文摘要：

Electrical stress experiments under different bias configurations for AlGaN/GaN high electron mobility transistors were performed and analyzed.The electric field applied was found to be the extrinsic cause for the device instability,while the traps were recognized as the main intrinsic factor.The effect of the traps on the device degradation was identified by recovery experiments and pulsed I-V measurements.The total degradation of the devices consists of two parts：recoverable degradation and unrecoverable degradation.The electric field induced traps combined with the inherent ones in the device bulk are mainly responsible for the recoverable degradation.