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Electrical properties of N-doped ZnO grown on sapphire by P-MBE
  • ISSN号：0268-1242
  • 期刊名称：Semiconductor Science and Technology
  • 时间：0
  • 页码：65-69
  • 语言：英文
  • 相关项目：稳定、高效的p型ZnO薄膜的制备及器件研究
作者： Zhao, D.X.|Zhang, Z.Z.|Wang, X.|Li, B.H.|Shen, D.Z.|Yao, B.|Zhang, J.Y.|Lu, Y.M.|Fan, X.W.|Tang, Z.K.|
同期刊论文项目
稳定、高效的p型ZnO薄膜的制备及器件研究
期刊论文 106 会议论文 7 专利 13
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