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中文摘要：
宽禁带ZnO是第三代半导体材料的典型代表，被认为是制备紫外发光和激光二极管的理想材料。但是，由于p型ZnO制备的困难，严重阻碍了ZnO的应用和发展。本项目针对ZnOp型掺杂中存在的关键科学问题，开展了高质量ZnO单晶薄膜的制备，ZnO的p型掺杂及ZnO基光电子器件的设计和制备的研究工作。利用P-MBE技术，生长出载流子浓度为10E16cm{-3}高质量ZnO单晶薄膜；制备出N，P单掺和Li-N共掺p型ZnO和载流子浓度达10E19cm{-3}、性能稳定的p型ZnO:(Cu,S)合金薄膜；结合第一性原理计算，阐明了N，P，Li-N及Cu和S在ZnO中的掺杂形态，受主能级及其对p型ZnO的形成，稳定性和物理性能的影响机制；系统阐述了Mg对N在MgZnO中固溶度及本征施主和N受主离化能的影响规律和机制，制备出N掺杂p型MgZnO；提出了提高p型ZnO性能和稳定性的物理途径；设计和制备出ZnO基同质结和异质结及MgZnO基日盲紫外探测器，实现了室温强紫外电致发光，低阈值电致受激发射和可见到日盲波段的紫外探测。研究工作为ZnO的p型掺杂和ZnO基光电子器件制备提供了技术储备和重要的理论依据。
结论摘要：
英文主题词ZnO;semiconductor;p-type doping;thin film;optoelectronic devices
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期刊论文
Control of structure, conduction behavior, and band gap of Zn 1-xMgxO films by nitrogen partial pres
Acceptor formation mechanisms determination from electrical and optical properties of p-type ZnO dop
Effects of nitrogen doping and illumination on lattice constants and conductivity behavior of zinc o
Optical and electrical properties of p-type ZnO fabricated by NH3 plasma post-treated ZnO thin films
Valence band offset of ZnO/Zn0.85Mg0.15O heterojunction measured by x-ray photoelectron spectroscopy
Structural and optical properties of Cd1-xFexSe microstructures grown by metalorganic chemical vapor
Acceptor related photoluminescence from ZnO:Sb nanowires fabricated by chemical vapor deposition met
Structural, optical, and hydrogenation properties of ZnO nanowall networks grown on a Si (111) subst
Fabrication and magnetization measurement of Ni thin films on silicon substrate by electrodeposition
Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO:N Film Produced by Ann
Influence of hydrostatic pressure on the native point defects in wurtzite ZnO: Ab initio calculation
Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spec
Biaxial stress-dependent optical band gap, crystalline, and electronic structure in wurtzite ZnO: Ex
Effect of annealing on conductivity behavior of undoped zinc oxide prepared by rf magnetron sputteri
Oxygen flux influence on the morphological, structural and optical properties of Zn1-xMgxO thin film
Formation of stable and reproducible low resistivity and high carrier concentration p -type ZnO dope
Cu+-codoping inducing the room-temperature magnetism and p-type conductivity of ZnCoO diluted magnet
Annealing temperature dependent electrical and optical properties of ZnO and MgZnO films in hydrogen
Optical property of hexagonal nanocrystalline zno film on Si substrate prepared by plasma-enhanced C
Nitrogen-related recombination mechanisms in p -type ZnO films grown by plasma-assisted molecular be
Room temperature excitonic spontaneous and stimulated emission properties in ZnO/MgZnO multiple quan
Nitrogen partial pressure-dependent Mg concentration, structure, and optical properties of MgxZn1-xO
Optical and electrical properties of highly nitrogen-doped ZnO thin films grown by plasma-assisted m
Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO
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