中文摘要：

三维高深宽比硅基结构是基于微纳制造技术的功能载体或执行机构。其由于小尺寸特征而获得特殊的微纳效应，具有灵敏度高、分辨率高、噪声低、位移量小等特点，在光电、生物、微能源和集成互连等技术领域具有广泛应用前景。主要分析了高深宽比硅基微纳结构的种类及特点；系统综述了该结构的制造方法及国内外研究现状；详细描述了不同外形特征结构的应用领域；从工艺标准、建模仿真、批量生产等方面讨论了高深宽比硅基微纳结构制造存在的技术瓶颈问题，并对高深宽比硅基微纳结构的可靠制造与发展趋势进行了展望。

英文摘要：

Three-dimensional silicon nanometer fabrication technology are used microstructures with high aspect ratio based on micro/ as function carriers or actuators. The microstructures with special micro/nanometer effects because of the microminiaturization are widely applied in the technology fields of photoelectric, biology, micro-power and integrated interconnection due to the high sensitivity, low noise, high resolution and small displacement. The types and features of silicon micro/nanometer structures with high aspect ratio are mainly analyzed. The fabrication method and current situation are systematically summarized from abroad and home. The application fields of different shape structures are described in detail. The technical bottlenecks are discussed from technological standard, modeling, simulation and mass production; The reliable manufacturing and development tendency of silicon micro/ nanometer structures are proposed.