采用溶胶-凝胶技术,蒸发诱导自组装法(EISA)工艺制备了二氧化硅透明有序介孔薄膜。以十六烷基三甲基溴化铵(CTAB)作为模板剂,正硅酸乙酯(TEOS)为硅源前驱体,基片采用双面抛光的硅片,利用提拉法制备薄膜。经过表面修饰剂六甲基二硅胺烷(HMDS)修饰后,薄膜具有疏水性能,而且薄膜的二氧化硅骨架结构更稳定。由椭偏仪测得热处理后的薄膜的折射率低至1.18.而薄膜的介电常数为2.14。
Mesoporous silica films were successfully prepared through sol-gel process with evaporation-induced self-assembly Tetraethoxysilane (TEOS) was used as silica precursor and Cetyltrimethylammonium bromide (CTAB) as the templating agent. The films were deposited on the silicon wafer or glass substrate using a dip-coating method. The refractive index(κ) of the mesoporous films was 1.18, while the dielectric constant(n) was 2.14.