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Investigations on the gate oxide dependence of AC RTN characteristics in nanoscaled MOSFETs: SiON vs
  • 所属机构名称：北京大学
  • 会议名称：2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
  • 时间：2013
  • 成果类型：会议
  • 相关项目：新型围栅硅纳米线MOS器件的涨落性与可靠性研究
作者： Gong, Nanbo|Qiu, Yingxin|Wang, Runsheng|Zou, Jibin|Liu, Changze|Huang, Ru|
同会议论文项目
新型围栅硅纳米线MOS器件的涨落性与可靠性研究
期刊论文 8 会议论文 20
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