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Deep understanding of AC RTN in MuGFETs through new characterization method and impacts on logic cir
  • 所属机构名称：北京大学
  • 会议名称：2013 Symposium on VLSI Technology, VLSIT 2013
  • 时间：2013
  • 成果类型：会议
  • 相关项目：新型围栅硅纳米线MOS器件的涨落性与可靠性研究
作者： Xiong, Weize|Wang, Jianping|Liu, Jinhua|Wu, Jingang|Wong, Waisum|Yu, Shaofeng|Wu, Hanming|Lee, Shiuh-Wuu|Wang, Yangyuan|
同会议论文项目
新型围栅硅纳米线MOS器件的涨落性与可靠性研究
期刊论文 8 会议论文 20
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